李建伟,王一帆,蒋春丽,刘徐徐,陈长安,吴吉良,朱吉鹏,叶小球

• 1:表面物理与化学重点实验室

摘要(Abstract)：

磁约束聚变装置真空室第一壁的烘烤处理温度一般不超过773 K，钨作为第一壁和偏滤器的重要候选材料，其氢同位素的热脱附温度常常高达800 K及以上。本研究通过气相热扩散方式向钨中引入氘，利用热脱附谱法（TDS）研究了真空热处理保温温度和时间对钨中氘脱附行为的影响。结果显示：对于未经真空热处理的钨，D_2的脱附峰对应温度为902 K,HD脱附峰为934 K;HD在1 273 K以后仍存在热脱附峰。在经过了373～563 K真空热处理2 h后，钨中氘没有明显释放，但随热处理温度升高，D_2与HD峰位有向低温移动趋势；当热处理时间为3 h时，D_2与HD峰位向低温方向移动程度更大，且热处理温度提高至673 K时，在保温阶段即有大量氘释放，HD的第二个峰在1 000 K以下即释放完毕。研究结果对于磁约束聚变装置真空室第一壁烘烤工艺的优化具有重要的参考意义。

关键词(KeyWords)： 气相热充;氘滞留;热脱附谱(TDS);真空热处理

Abstract:

Keywords:

基金项目(Foundation): 国家重点研发计划（2022YFE03140003）;; 表面物理与化学重点实验室基金（TCGH070406;JBNY0601）

作者(Author): 李建伟,王一帆,蒋春丽,刘徐徐,陈长安,吴吉良,朱吉鹏,叶小球

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